IRL3803STRR

IRL3803STRRPBF vs IRL3803STRR vs IRL3803STRRPBF,IRL3803S,

 
PartNumberIRL3803STRRPBFIRL3803STRRIRL3803STRRPBF,IRL3803S,
DescriptionMOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nCMOSFET N-CH 30V 140A D2PAK
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current140 A--
Rds On Drain Source Resistance9 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge93.3 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation200 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon / IR--
Fall Time35 ns35 ns-
Product TypeMOSFET--
Rise Time230 ns230 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns29 ns-
Typical Turn On Delay Time14 ns14 ns-
Part # AliasesSP001573670--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-200 W-
Vgs Gate Source Voltage-16 V-
Id Continuous Drain Current-140 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-9 mOhms-
Qg Gate Charge-93.3 nC-
Өндіруші Бөлім № Сипаттама RFQ
Infineon / IR
Infineon / IR
IRL3803STRRPBF MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC
Infineon Technologies
Infineon Technologies
IRL3803STRRPBF RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC
IRL3803STRR MOSFET N-CH 30V 140A D2PAK
IRL3803STRRPBF,IRL3803S, Жаңа және түпнұсқа
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