IRGIB6B60

IRGIB6B60KDPBF vs IRGIB6B60KD116P vs IRGIB6B60KD

 
PartNumberIRGIB6B60KDPBFIRGIB6B60KD116PIRGIB6B60KD
DescriptionIGBT Transistors 600V Low-VceonINSTOCK
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C11 A--
Pd Power Dissipation38 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesRC--
PackagingTube-Tube
Height16 mm--
Length10.6 mm--
Width4.8 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity2000--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesSP001533840--
Unit Weight0.081130 oz--
Package Case--TO-220-3 Full Pack
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-220AB Full-Pak
Power Max--38W
Reverse Recovery Time trr--70ns
Current Collector Ic Max--11A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--NPT
Current Collector Pulsed Icm--22A
Vce on Max Vge Ic--2.2V @ 15V, 5A
Switching Energy--110μJ (on), 135μJ (off)
Gate Charge--18.2nC
Td on off 25°C--25ns/215ns
Test Condition--400V, 5A, 100 Ohm, 15V
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IRGIB6B60KDPBF IGBT Transistors 600V Low-Vceon
IRGIB6B60KD116P Жаңа және түпнұсқа
IRGIB6B60KDPBF IGBT Transistors 600V Low-Vceon
IRGIB6B60KD INSTOCK
IRGIB6B60KD116P. Жаңа және түпнұсқа
IRGIB6B60KDPBF. Жаңа және түпнұсқа
IRGIB6B60PBF Жаңа және түпнұсқа
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