IRFR9N

IRFR9N20DPBF vs IRFR9N20DTR vs IRFR9N20DTRL

 
PartNumberIRFR9N20DPBFIRFR9N20DTRIRFR9N20DTRL
DescriptionMOSFET 200V 1 N-CH HEXFET 380mOhms 18nCMOSFET N-CH 200V 9.4A DPAKMOSFET N-CH 200V 9.4A DPAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current9.4 A--
Rds On Drain Source Resistance380 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation86 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypeSmps MOSFET--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time9.3 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time7.5 ns--
Part # AliasesSP001565076--
Unit Weight0.139332 oz--
Өндіруші Бөлім № Сипаттама RFQ
Infineon / IR
Infineon / IR
IRFR9N20DTRPBF MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
IRFR9N20DTRLPBF MOSFET MOSFT 200V 9.4A 380mOhm 18nC
Infineon Technologies
Infineon Technologies
IRFR9N20DPBF MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
Infineon Technologies
Infineon Technologies
IRFR9N20DPBF MOSFET N-CH 200V 9.4A DPAK
IRFR9N20DTR MOSFET N-CH 200V 9.4A DPAK
IRFR9N20DTRL MOSFET N-CH 200V 9.4A DPAK
IRFR9N20DTRR MOSFET N-CH 200V 9.4A DPAK
IRFR9N20DTRLPBF MOSFET N-CH 200V 9.4A DPAK
IRFR9N20DTRPBF MOSFET N-CH 200V 9.4A DPAK
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