 |  | | |
| PartNumber | IRFR13N20DPBF | IRFR13N20DPBF,IRFR13N20D | IRFR13N20DPBF-H |
| Description | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 14 A | - | - |
| Rds On Drain Source Resistance | 235 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 110 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Smps MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 27 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 17 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | SP001552110 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFR13N20DPBF | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | |
Infineon Technologies |
IRFR13N20DPBF | MOSFET N-CH 200V 13A DPAK | |
| IRFR13N20DPBF,IRFR13N20D | Жаңа және түпнұсқа | ||
| IRFR13N20DPBF-H | Жаңа және түпнұсқа | ||
| IRFR13N20DPBFCT | Жаңа және түпнұсқа | ||
| IRFR13N20DPBFINFINEON | Жаңа және түпнұсқа |