 | | | |
| PartNumber | IRFR420TRLPBF | IRFR420PBF | IRFR420TRL |
| Description | MOSFET N-CH 500V HEXFET MOSFET D-PAK | MOSFET N-CH 500V HEXFET MOSFET D-PAK | MOSFET RECOMMENDED ALT 844-IRFR420TRLPBF |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | N |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Packaging | Reel | Tube | Reel |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | IRFR/U | IRFR/U | IRFR/U |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Id Continuous Drain Current | - | 2.4 A | - |
| Rds On Drain Source Resistance | - | 3 Ohms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 19 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 42 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 1.5 S | - |
| Fall Time | - | 16 ns | - |
| Rise Time | - | 8.6 ns | - |
| Typical Turn Off Delay Time | - | 33 ns | - |
| Typical Turn On Delay Time | - | 8 ns | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFR430ATRPBF | MOSFET N-CH 500V HEXFET MOSFET D-PAK | |
| IRFR430APBF | MOSFET N-CH 500V HEXFET MOSFET D-PAK | ||
| IRFR430ATRLPBF | MOSFET N-Chan 500V 5.0 Amp | ||
| IRFR420TRRPBF | MOSFET N-Chan 500V 2.4 Amp | ||
| IRFR420TRLPBF | MOSFET N-CH 500V HEXFET MOSFET D-PAK | ||
| IRFR420PBF | MOSFET N-CH 500V HEXFET MOSFET D-PAK | ||
| IRFR420TRL | MOSFET RECOMMENDED ALT 844-IRFR420TRLPBF | ||
Infineon / IR |
IRFR420TRPBF | MOSFET | |
| IRFR420TRLPBF-CUT TAPE | Жаңа және түпнұсқа | ||
| IRFR420TRPBF-CUT TAPE | Жаңа және түпнұсқа | ||
| IRFR420ATTR | Жаңа және түпнұсқа | ||
| IRFR420BTMBLT | Жаңа және түпнұсқа | ||
| IRFR420S | Жаңа және түпнұсқа | ||
| IRFR420TM | MOSFET Transistor, N-Channel, TO-252AA | ||
| IRFR420TRPBF,IRFR420TR,F | Жаңа және түпнұсқа | ||
| IRFR4212 | Жаңа және түпнұсқа | ||
| IRFR4212TR | Жаңа және түпнұсқа | ||
| IRFR4212TRPBF | Жаңа және түпнұсқа | ||
| IRFR421TM | Жаңа және түпнұсқа | ||
| IRFR4229A | Жаңа және түпнұсқа | ||
| IRFR422TRPBF | Жаңа және түпнұсқа | ||
| IRFR422TRR | Жаңа және түпнұсқа | ||
| IRFR422TRRPBF | Жаңа және түпнұсқа | ||
| IRFR430ATRPBF,IRFR430APB | Жаңа және түпнұсқа | ||
| IRFR430BTMBLT | Жаңа және түпнұсқа | ||
| IRFR4310PBF | Жаңа және түпнұсқа | ||
Vishay |
IRFR430ATRLPBF | MOSFET N-CH 500V 5A DPAK | |
| IRFR420TRRPBF | IGBT Transistors MOSFET N-Chan 500V 2.4 Amp | ||
| IRFR420ATRPBF | MOSFET N-CH 500V 3.3A DPAK | ||
| IRFR420PBF | MOSFET N-CH 500V 2.4A DPAK | ||
| IRFR420TR | MOSFET N-CH 500V 2.4A DPAK | ||
| IRFR420TRL | MOSFET N-CH 500V 2.4A DPAK | ||
| IRFR420TRLPBF | MOSFET N-CH 500V 2.4A DPAK | ||
| IRFR420TRPBF | MOSFET N-CH 500V 2.4A DPAK | ||
| IRFR420TRR | MOSFET N-CH 500V 2.4A DPAK | ||
| IRFR430APBF | MOSFET N-CH 500V 5A DPAK | ||
| IRFR430ATRPBF | MOSFET N-CH 500V 5A DPAK | ||
| IRFR430ATRRPBF | RF Bipolar Transistors MOSFET N-Chan 500V 5.0 Amp | ||
| IRFR420B | Жаңа және түпнұсқа | ||
| IRFR420BTM-NL | Жаңа және түпнұсқа | ||
| IRFR420T | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| IRFR430A | MOSFET N-Chan 500V 5.0 Amp | ||
| IRFR430BTM-NL | Жаңа және түпнұсқа | ||
| IRFR430TRPBF | Жаңа және түпнұсқа | ||
| IRFR4510 | Жаңа және түпнұсқа | ||
ON Semiconductor |
IRFR420BTM | MOSFET N-CH 500V 2.3A DPAK | |
| IRFR421 | Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| IRFR422 | Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| IRFR430BTF | Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| IRFR430BTM | Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |