 |  |  | |
| PartNumber | IRFI820GPBF | IRFI820BTU | IRFI820G |
| Description | MOSFET RECOMMENDED ALT 844-IRFI820G | MOSFET N-Chan 500V 2.1 Amp | |
| Manufacturer | Vishay | FSC | IR |
| Product Category | MOSFET | IC Chips | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Packaging | Tube | - | Tube |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | IRFI | - | - |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.211644 oz | - | 0.211644 oz |
| Package Case | - | - | TO-220-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 30 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 16 ns |
| Rise Time | - | - | 8.6 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 2.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Rds On Drain Source Resistance | - | - | 3 Ohms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 33 ns |
| Typical Turn On Delay Time | - | - | 8 ns |
| Channel Mode | - | - | Enhancement |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFI820GPBF | MOSFET RECOMMENDED ALT 844-IRFI820G | |
| IRFI820BTU | Жаңа және түпнұсқа | ||
Vishay |
IRFI820GPBF | Darlington Transistors MOSFET N-Chan 500V 2.1 Amp | |
| IRFI820G | MOSFET N-Chan 500V 2.1 Amp |