 | |  | |
| PartNumber | IRFH5210TRPBF | IRFH5215TR2PBF | IRFH5210TR2PBF |
| Description | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC | MOSFET MOSFT 150V 27A 58mOhm 20nC Qg | MOSFET N-CH 100V 10A 5X6 PQFN |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PQFN-8 | PQFN-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 150 V | - |
| Id Continuous Drain Current | 10 A | 5 A | - |
| Rds On Drain Source Resistance | 14.9 mOhms | 58 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 40 nC | 20 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 3.6 W | 3.6 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 0.83 mm | 0.83 mm | - |
| Length | 6 mm | 6 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5 mm | 5 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 66 S | 21 S | - |
| Fall Time | 6.5 ns | 2.9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9.7 ns | 6.3 ns | - |
| Factory Pack Quantity | 4000 | 400 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 7.2 ns | - | - |
| Part # Aliases | SP001556226 | SP001565794 | - |
| Unit Weight | - | 0.017637 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH5215TRPBF | MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | |
| IRFH5215TR2PBF | MOSFET MOSFT 150V 27A 58mOhm 20nC Qg | ||
Infineon Technologies |
IRFH5210TRPBF | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC | |
| IRFH5210TR2PBF | MOSFET N-CH 100V 10A 5X6 PQFN | ||
| IRFH5210TRPBF | MOSFET N-CH 100V 10A 8-PQFN | ||
| IRFH5215TR2PBF | MOSFET N-CH 150V 5.0A PQFN | ||
| IRFH5215TRPBF | IGBT Transistors MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | ||
| IRFH5210PBF | Жаңа және түпнұсқа | ||
| IRFH5210TRPBF. | Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0126ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Diss |