IRFH5204

IRFH5204TR2PBF vs IRFH5204TRPBF. vs IRFH5204TRPBF

 
PartNumberIRFH5204TR2PBFIRFH5204TRPBF.IRFH5204TRPBF
DescriptionMOSFET MOSFT 40V 100A 4.3mOhm 42nC QgRF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 4.3mOhms 42nC
ManufacturerInfineon-International Rectifier
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePQFN-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current22 A--
Rds On Drain Source Resistance4.3 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge42 nC--
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation3.6 W--
ConfigurationSingle-Single Quad Drain Triple Source
PackagingReel-Reel
Height0.83 mm--
Length6 mm--
Transistor Type1 N-Channel-1 N-Channel
Width5 mm--
BrandInfineon / IR--
Forward Transconductance Min96 S--
Fall Time8.3 ns-8.3 ns
Product TypeMOSFET--
Rise Time14 ns-14 ns
Factory Pack Quantity400--
SubcategoryMOSFETs--
Part # AliasesSP001560370--
Package Case--PQFN-8
Pd Power Dissipation--105 W
Minimum Operating Temperature--- 55 C
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--100 A
Vds Drain Source Breakdown Voltage--40 V
Rds On Drain Source Resistance--4.3 mOhms
Typical Turn Off Delay Time--18 ns
Typical Turn On Delay Time--8.4 ns
Qg Gate Charge--42 nC
Channel Mode--Enhancement
Өндіруші Бөлім № Сипаттама RFQ
Infineon / IR
Infineon / IR
IRFH5204TR2PBF MOSFET MOSFT 40V 100A 4.3mOhm 42nC Qg
Infineon Technologies
Infineon Technologies
IRFH5204TR2PBF MOSFET N-CH 40V 22A PQFN
IRFH5204TRPBF RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 4.3mOhms 42nC
IRFH5204TRPBF. Жаңа және түпнұсқа
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