 | |  | |
| PartNumber | IRFD110PBF | IRFD110 | IRFD113 |
| Description | MOSFET N-CH 100V HEXFET MOSFET HEXDI | MOSFET RECOMMENDED ALT 844-IRFD110PBF | MOSFET N-CH 60V 800MA 4-DIP |
| Manufacturer | Vishay | Vishay | SI |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | N | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | HVMDIP-4 | HVMDIP-4 | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Rds On Drain Source Resistance | 540 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 3.37 mm | - | - |
| Length | 6.29 mm | - | - |
| Series | IRFD | IRFD | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 0.8 S | - | - |
| Fall Time | 9.4 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 6.9 ns | - | - |
| Unit Weight | 0.010582 oz | - | - |
| Package Case | - | - | HVMDIP-4 |
| Id Continuous Drain Current | - | - | 800 mA |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 800 mOhms |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFD110PBF | MOSFET N-CH 100V HEXFET MOSFET HEXDI | |
| IRFD113PBF | MOSFET 60V 800mOhm@10V 0.8A N-Ch | ||
| IRFD110 | MOSFET RECOMMENDED ALT 844-IRFD110PBF | ||
Vishay |
IRFD110 | MOSFET N-CH 100V 1A 4-DIP | |
| IRFD110PBF | MOSFET N-CH 100V 1A 4-DIP | ||
| IRFD113 | MOSFET N-CH 60V 800MA 4-DIP | ||
| IRFD113PBF | RF Bipolar Transistors MOSFET 60V 800mOhm@10V 0.8A N-Ch | ||
| IRFD110-IR | Жаңа және түпнұсқа | ||
| IRFD110PBF,IRFD110 | Жаңа және түпнұсқа | ||
| IRFD110PBF,IRFD110,FD110 | Жаңа және түпнұсқа | ||
| IRFD110PBF-CN | Жаңа және түпнұсқа | ||
| IRFD110PBF-PH | Жаңа және түпнұсқа | ||
| IRFD111 | Small Signal Field-Effect Transistor, 1A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| IRFD111PBF | Жаңа және түпнұсқа | ||
| IRFD111R | Жаңа және түпнұсқа | ||
| IRFD112 | Small Signal Field-Effect Transistor, 0.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| IRFD112PBF | Жаңа және түпнұсқа | ||
| IRFD113(94-4111) | Жаңа және түпнұсқа | ||
| IRFD113(HSMRKD) | Жаңа және түпнұсқа | ||
| IRFD113PBF-IRFD113 | Жаңа және түпнұсқа |