 | | | |
| PartNumber | IRF7834 | IRF7834TR | IRF7834PBF |
| Description | MOSFET N-CH 30V 19A 8-SOIC | MOSFET N-CH 30V 19A 8-SOIC | MOSFET N-CH 30V 19A 8-SOIC |
| Manufacturer | - | - | International Rectifier |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.019048 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOIC-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Quad Drain Triple Source |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 2.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 5 ns |
| Rise Time | - | - | 14.3 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 19 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.35 V to 2.25 V |
| Rds On Drain Source Resistance | - | - | 5.5 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 18 ns |
| Typical Turn On Delay Time | - | - | 13.7 ns |
| Qg Gate Charge | - | - | 29 nC |
| Forward Transconductance Min | - | - | 85 S |
| Channel Mode | - | - | Enhancement |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7834TRPBF | MOSFET MOSFT 30V 19A 4.5mOhm 29nC | |
Infineon Technologies |
IRF7834TRPBF | MOSFET N-CH 30V 19A 8-SOIC | |
| IRF7834 | MOSFET N-CH 30V 19A 8-SOIC | ||
| IRF7834TR | MOSFET N-CH 30V 19A 8-SOIC | ||
| IRF7834PBF | MOSFET N-CH 30V 19A 8-SOIC |