IRF6620T

IRF6620TR1PBF vs IRF6620TR1 vs IRF6620TR

 
PartNumberIRF6620TR1PBFIRF6620TR1IRF6620TR
DescriptionMOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nCMOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MXDirectFET-MX-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current27 A27 A-
Rds On Drain Source Resistance3.6 mOhms2.7 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge28 nC28 nC-
Pd Power Dissipation89 W2.8 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon / IRInfineon / IR-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001525516SP001530074-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Fall Time-6.6 ns-
Rise Time-80 ns-
Typical Turn Off Delay Time-20 ns-
Typical Turn On Delay Time-18 ns-
Unit Weight-0.035274 oz-
Өндіруші Бөлім № Сипаттама RFQ
Infineon / IR
Infineon / IR
IRF6620TRPBF MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC
IRF6620TR1PBF MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC
IRF6620TR1 MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC
IRF6620TR Жаңа және түпнұсқа
IRF6620TRPBF,IRF6620TR,F Жаңа және түпнұсқа
IRF6620TRPBF,IRF6620TR,F6620 Жаңа және түпнұсқа
Infineon Technologies
Infineon Technologies
IRF6620TR1 MOSFET N-CH 20V 27A DIRECTFET
IRF6620TR1PBF MOSFET N-CH 20V 27A DIRECTFET
IRF6620TRPBF MOSFET N-CH 20V 27A DIRECTFET
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