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| PartNumber | IRF640PBF | IRF640SPBF | IRF640STRL |
| Description | MOSFET N-CH 200V HEXFET MOSFET | MOSFET N-Chan 200V 18 Amp | MOSFET RECOMMENDED ALT 844-IRF640STRLPBF |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | N |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
| Package / Case | TO-220AB-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 3.3 A | 18 A | - |
| Rds On Drain Source Resistance | 1.5 Ohms | 180 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 8.2 nC | 70 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 36 W | 130 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | Reel |
| Height | 15.49 mm | - | 4.83 mm |
| Length | 10.41 mm | - | 10.67 mm |
| Series | IRF | IRF | IRF |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.7 mm | - | 9.65 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 0.8 S | 6.7 S | - |
| Fall Time | 8.9 ns | 36 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 17 ns | 51 ns | - |
| Factory Pack Quantity | 50 | 1000 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 45 ns | - |
| Typical Turn On Delay Time | 8.2 ns | 14 ns | - |
| Unit Weight | 0.211644 oz | 0.050717 oz | 0.050717 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF640PBF | MOSFET N-CH 200V HEXFET MOSFET | |
| IRF640STRLPBF | MOSFET N-CH 200V HEXFET MOSFET D2-PA | ||
| IRF640STRRPBF | MOSFET N-Chan 200V 18 Amp | ||
| IRF640SPBF | MOSFET N-Chan 200V 18 Amp | ||
| IRF640STRR | MOSFET RECOMMENDED ALT 844-IRF640STRRPBF | ||
| IRF640STRL | MOSFET RECOMMENDED ALT 844-IRF640STRLPBF | ||
Infineon Technologies |
IRF640NSTRLPBF | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | |
| IRF640NSTRLPBF | MOSFET N-CH 200V 18A D2PAK | ||
| IRF640NSTRRPBF | Darlington Transistors MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | ||
Infineon / IR |
IRF640NSTRRPBF | MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | |
| IRF640NSTRLPBF-CUT TAPE | Жаңа және түпнұсқа | ||
| IRF640NSTRRPBF-CUT TAPE | Жаңа және түпнұсқа | ||
| IRF640STRLPBF-CUT TAPE | Жаңа және түпнұсқа | ||
| IRF640STRRPBF-CUT TAPE | Жаңа және түпнұсқа | ||
| IRF640S F640S | Жаңа және түпнұсқа | ||
| IRF640NSTRL | HEXFET N-CH MOSFET 18A 200V D2PAK, PK | ||
| IRF640NSTRLPBF STB19NF | Жаңа және түпнұсқа | ||
| IRF640NSTRLPBF,IRF640NS, | Жаңа және түпнұсқа | ||
| IRF640NSTRLPBF,IRF640NST | Жаңа және түпнұсқа | ||
| IRF640NSTRLPBF,IRF640STR | Жаңа және түпнұсқа | ||
| IRF640NSTRPBF | Жаңа және түпнұсқа | ||
| IRF640NSTRR | 18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| IRF640PBF, | Жаңа және түпнұсқа | ||
| IRF640PBF,F640,IRF640 | Жаңа және түпнұсқа | ||
| IRF640PBF,IRF640 | Жаңа және түпнұсқа | ||
| IRF640R | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF640STRPBF | Жаңа және түпнұсқа | ||
Vishay |
IRF640STRR | MOSFET N-CH 200V 18A D2PAK | |
| IRF640PBF | MOSFET N-CH 200V 18A TO-220AB | ||
| IRF640S | MOSFET N-CH 200V 18A D2PAK | ||
| IRF640SPBF | MOSFET N-CH 200V 18A D2PAK | ||
| IRF640STRL | MOSFET N-CH 200V 18A D2PAK | ||
| IRF640STRLPBF | MOSFET N-CH 200V 18A D2PAK | ||
| IRF640STRRPBF | Darlington Transistors MOSFET N-Chan 200V 18 Amp |