 |  | | |
| PartNumber | IRF6216PBF | IRF6216PBF , 2SJ527 | IRF6216PBF-1 |
| Description | MOSFET 1 P-CH -150V HEXFET 240mOhms 33nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 2.2 A | - | - |
| Rds On Drain Source Resistance | 240 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 33 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | Smps MOSFET | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 2.7 S | - | - |
| Fall Time | 26 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 3800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Part # Aliases | SP001576900 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon / IR |
IRF6216PBF | MOSFET 1 P-CH -150V HEXFET 240mOhms 33nC | |
Infineon Technologies |
IRF6216PBF | MOSFET P-CH 150V 2.2A 8-SOIC | |
| IRF6216PBF , 2SJ527 | Жаңа және түпнұсқа | ||
| IRF6216PBF-1 | Жаңа және түпнұсқа |