 |  | | |
| PartNumber | IRF610PBF | IRF610S | IRF610LPBF |
| Description | MOSFET N-CH 200V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRF610SPBF | MOSFET RECOMMENDED ALT 844-IRF610SPBF |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | N | E |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220AB-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 3.3 A | - | - |
| Rds On Drain Source Resistance | 1.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 36 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Series | IRF | IRF | IRF |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 0.8 S | - | - |
| Fall Time | 8.9 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 17 ns | - | - |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | - | - |
| Typical Turn On Delay Time | 8.2 ns | - | - |
| Unit Weight | 0.211644 oz | 0.050717 oz | 0.211644 oz |
| Height | - | 4.83 mm | - |
| Length | - | 10.67 mm | - |
| Width | - | 9.65 mm | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF610SPBF | MOSFET N-CH 200V HEXFET MOSFET D2-PA | |
| IRF610PBF | MOSFET N-CH 200V HEXFET MOSFET | ||
| IRF610STRLPBF | MOSFET N-Chan 200V 3.3 Amp | ||
| IRF610STRRPBF | MOSFET N-CH 200V HEXFET MOSFET D2-PA | ||
| IRF610STRR | MOSFET RECOMMENDED ALT 844-IRF610STRRPBF | ||
| IRF610S | MOSFET RECOMMENDED ALT 844-IRF610SPBF | ||
| IRF610LPBF | MOSFET RECOMMENDED ALT 844-IRF610SPBF | ||
Vishay |
IRF610PBF | MOSFET N-CH 200V 3.3A TO-220AB | |
| IRF610LPBF | MOSFET N-CH 200V 3.3A TO-262 | ||
| IRF610L | MOSFET N-CH 200V 3.3A TO-262 | ||
| IRF610S | MOSFET N-CH 200V 3.3A D2PAK | ||
| IRF610STRL | MOSFET N-CH 200V 3.3A D2PAK | ||
| IRF610STRR | MOSFET N-CH 200V 3.3A D2PAK | ||
| IRF610SPBF | Darlington Transistors MOSFET N-Chan 200V 3.3 Amp | ||
| IRF610STRLPBF | IGBT Transistors MOSFET N-Chan 200V 3.3 Amp | ||
| IRF610STRRPBF | IGBT Transistors MOSFET N-Chan 200V 3.3 Amp | ||
| IRF610 | MOSFET N-CH 200V 3.3A TO-220AB | ||
| IRF610B_FP001 | MOSFET 200V Single | ||
| IRF610_R4941 | MOSFET TO-220AB N-Ch Powe | ||
| IRF610R | *** FREE SHIPPING ORDERS OVER $100 *** | ||
| IRF610 , MM3Z6V2 | Жаңа және түпнұсқа | ||
| IRF610-TSTU | Жаңа және түпнұсқа | ||
| IRF610. | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF6100PBF,IRF6100,F6100 | Жаңа және түпнұсқа | ||
| IRF6100TR PBF | Жаңа және түпнұсқа | ||
| IRF610A | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF610AZ-TSTU | Жаңа және түпнұсқа | ||
| IRF610B | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | ||
| IRF610N | Жаңа және түпнұсқа | ||
| IRF610PBF(IRF610) | Жаңа және түпнұсқа | ||
| IRF610PBF,IRF610A,IRF610 | Жаңа және түпнұсқа | ||
| IRF610R4941 | Жаңа және түпнұсқа | ||
| IRF610S2497 | Жаңа және түпнұсқа | ||
| IRF610STRPBF | Жаңа және түпнұсқа | ||
Infineon Technologies |
IRF6100 | MOSFET P-CH 20V 5.1A FLIP-FET | |
| IRF6100PBF | MOSFET P-CH 20V 5.1A FLIPFET |