| PartNumber | IRF3711SPBF | IRF3711STRL | IRF3711S |
| Description | MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC | MOSFET N-CH 20V 110A D2PAK | MOSFET N-CH 20V 110A D2PAK |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | MOSFET (Metal Oxide) | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | TO-263-3, DPak (2 Leads + Tab), TO-263AB | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 110 A | - | - |
| Rds On Drain Source Resistance | 8.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 29 nC | - | - |
| Pd Power Dissipation | 120 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | Tape & Reel (TR) | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001576712 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Series | - | HEXFET | - |
| Part Status | - | Obsolete | - |
| FET Type | - | N-Channel | - |
| Drain to Source Voltage (Vdss) | - | 20V | - |
| Current Continuous Drain (Id) @ 25°C | - | 110A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5V, 10V | - |
| Vgs(th) (Max) @ Id | - | 3V @ 250A | - |
| Gate Charge (Qg) (Max) @ Vgs | - | 44nC @ 4.5V | - |
| Vgs (Max) | - | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | 2980pF @ 10V | - |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | 3.1W (Ta), 120W (Tc) | - |
| Rds On (Max) @ Id, Vgs | - | 6 mOhm @ 15A, 10V | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | D2PAK | - |