IPU09

IPU090N03L G vs IPU09N03LB G vs IPU09N03LA G

 
PartNumberIPU090N03L GIPU09N03LB GIPU09N03LA G
DescriptionMOSFET N-Ch 30V 40A IPAK-3MOSFET N-CH 30V 50A IPAKMOSFET N-CH 25V 50A TO-251
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation42 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height6.22 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width2.38 mm--
BrandInfineon Technologies--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time4 ns--
Part # AliasesIPU090N03LGXK--
Unit Weight0.139332 oz--
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPU090N03L G MOSFET N-Ch 30V 40A IPAK-3
Infineon Technologies
Infineon Technologies
IPU09N03LB G MOSFET N-CH 30V 50A IPAK
IPU090N03L G MOSFET N-CH 30V 40A TO-251-3
IPU09N03LA G MOSFET N-CH 25V 50A TO-251
IPU090N03LG Жаңа және түпнұсқа
IPU09N03L Жаңа және түпнұсқа
IPU09N03LAG MOSFET Transistor, N-Channel, TO-251
IPU09N03LAG , 2SJ182TL Жаңа және түпнұсқа
IPU09N03LBG Жаңа және түпнұсқа
IPU09N03LA Жаңа және түпнұсқа
IPU09N03LB Жаңа және түпнұсқа
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