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| PartNumber | IPP200N25N3 G | IPP200N25N3GXKSA1 |
| Description | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | PG-TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V |
| Id Continuous Drain Current | 64 A | 64 A |
| Rds On Drain Source Resistance | 17.5 mOhms | 17.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 20 V |
| Qg Gate Charge | 86 nC | 86 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 300 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Tube | Tube |
| Height | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - |
| Width | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 61 S | 61 S |
| Fall Time | 12 ns | 12 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 20 ns | 20 ns |
| Factory Pack Quantity | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 45 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns |
| Part # Aliases | IPP200N25N3GXKSA1 IPP2N25N3GXK SP000677894 | G IPP200N25N3 IPP2N25N3GXK SP000677894 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP200N25N3 G | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | |
| IPP200N25N3GXKSA1 | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | ||
| IPP200N25N3GXKSA1 | MOSFET N-CH 250V 64A TO220-3 | ||
| IPP200N25N3 G | IGBT Transistors MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | ||
| IPP200N25N3G | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | ||
| IPP200N25N | Жаңа және түпнұсқа | ||
| IPP200N25N3GXK | Trans MOSFET N-CH 250V 64A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP200N25N3GXKSA1) | ||
| IPP200N25N3 | Жаңа және түпнұсқа | ||
| IPP200N25N3G 200N25N | Жаңа және түпнұсқа | ||
| IPP200N25N3G,200N25NG, | Жаңа және түпнұсқа | ||
| IPP200N25N3GS | Жаңа және түпнұсқа |