 | | | |
| PartNumber | IPP12CN10L G | IPP12CN10LGXKSA1 | IPP12CN10N G |
| Description | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | MOSFET N-Ch 100V 67A TO220-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 69 A | 69 A | 67 A |
| Rds On Drain Source Resistance | 9.9 mOhms | 9.9 mOhms | 12.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 58 nC | 58 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 125 W | 125 W | 125 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 2 | OptiMOS 2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 57 S | 57 S | - |
| Fall Time | 5 ns | 5 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 9 ns | 21 ns |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 39 ns | 39 ns | 32 ns |
| Typical Turn On Delay Time | 14 ns | 14 ns | 17 ns |
| Part # Aliases | IPP12CN10LGXKSA1 IPP12CN1LGXK SP000680864 | G IPP12CN10L IPP12CN1LGXK SP000680864 | IPP12CN10NGXK |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP12CN10L G | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | |
| IPP12CN10LGXKSA1 | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | ||
| IPP12CNE8N G | MOSFET N-CH 85V 67A TO-220 | ||
| IPP12CN10N G | MOSFET N-CH 100V 67A TO-220 | ||
| IPP12CN10NGXKSA1 | MOSFET N-CH 100V 67A TO-220 | ||
Infineon Technologies |
IPP12CNE8N G | MOSFET N-Ch 85V 67A TO220-3 | |
| IPP12CN10N G | MOSFET N-Ch 100V 67A TO220-3 | ||
| IPP12CN10LGXK | Trans MOSFET N-CH 100V 69A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP12CN10LGXKSA1) | ||
| IPP12CN10L G,12CN10L,IPP | Жаңа және түпнұсқа | ||
| IPP12CN10LG | Trans MOSFET N-CH 100V 69A 3-Pin(3+Tab) TO-220 | ||
| IPP12CN10LG,IPP10CN10NG, | Жаңа және түпнұсқа | ||
| IPP12CN10LG,IPP10CN10NG,IPP126N10N3G,12CN10, | Жаңа және түпнұсқа | ||
| IPP12CN10LG,IPP12CN10L G | Жаңа және түпнұсқа | ||
| IPP12CN10LG,IPP12CN10NG, | Жаңа және түпнұсқа | ||
| IPP12CN10LGXKSA1 , 2SD81 | Жаңа және түпнұсқа | ||
| IPP12CN10N | Жаңа және түпнұсқа | ||
| IPP12CN10NG | POWER FIELD-EFFECT TRANSISTOR, 67A I(D), 100V, 0.0129OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | ||
| IPP12CNE8N | Жаңа және түпнұсқа | ||
| IPP12CNE8NG | Жаңа және түпнұсқа | ||
| IPP12CN10L G | Darlington Transistors MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | ||
| IPP12CN10LGHKSA1 | MOSFET N-Ch 100V 69A TO220-3 |