IPP070N06N

IPP070N06N G vs IPP070N06NG vs IPP070N06NG(070N06N)

 
PartNumberIPP070N06N GIPP070N06NGIPP070N06NG(070N06N)
DescriptionMOSFET N-Ch 60V 80A TO220-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance7 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time36 ns--
Product TypeMOSFET--
Rise Time37 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time61 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesIPP070N06NGXK--
Unit Weight0.211644 oz--
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPP070N06N G MOSFET N-Ch 60V 80A TO220-3
Infineon Technologies
Infineon Technologies
IPP070N06N G MOSFET N-CH 60V 80A TO-220
IPP070N06NG Жаңа және түпнұсқа
IPP070N06NG(070N06N) Жаңа және түпнұсқа
IPP070N06NG,070N06N Жаңа және түпнұсқа
IPP070N06NG,070N06N,IPP0 Жаңа және түпнұсқа
IPP070N06NG,IPP070N06N,0 Жаңа және түпнұсқа
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