| PartNumber | IPN60R1K0CEATMA1 | IPN60R1K5CEATMA1 |
| Description | MOSFET CONSUMER | MOSFET CONSUMER |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | SOT-223-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 6.8 A | 5 A |
| Rds On Drain Source Resistance | 2.34 Ohms | 3.51 Ohms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 13 nC | 9.4 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 5 W | 5 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Height | 1.6 mm | 1.6 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | CoolMOS CE | CoolMOS CE |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.5 mm | 3.5 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 13 ns | 20 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8 ns | 7 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 40 ns |
| Typical Turn On Delay Time | 10 ns | 8 ns |
| Part # Aliases | IPN60R1K0CE SP001434884 | IPN60R1K5CE SP001434890 |
| Unit Weight | 0.003951 oz | 0.003951 oz |