 |  | | |
| PartNumber | IPI65R600C6XKSA1 | IPI65R600C6 | IPI65R660CFD |
| Description | MOSFET LOW POWER_LEGACY | MOSFET N-Ch 700V 7.3A I2PAK-3 CoolMOS C6 | Darlington Transistors MOSFET N-Ch 650V 6A I2PAK-3 CoolMOS CFD2 |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-262-3 | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Tube | - | Tube |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPI65R600C6XKSA1 SP000850504 | - | - |
| Unit Weight | 0.084199 oz | - | 0.084199 oz |
| Series | - | - | CoolMOS CFD2 |
| Part Aliases | - | - | IPI65R660CFDXK IPI65R660CFDXKSA1 SP000861696 |
| Package Case | - | - | I2PAK-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 63 W |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 8 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 6 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 660 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Qg Gate Charge | - | - | 22 nC |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI65R600C6XKSA1 | MOSFET LOW POWER_LEGACY | |
| IPI65R600C6 | MOSFET N-Ch 700V 7.3A I2PAK-3 CoolMOS C6 | ||
| IPI65R660CFD | Darlington Transistors MOSFET N-Ch 650V 6A I2PAK-3 CoolMOS CFD2 | ||
Infineon Technologies |
IPI65R600C6XKSA1 | MOSFET N-CH 650V 7.3A TO262 | |
| IPI65R660CFDXKSA1 | MOSFET N-CH 650V 6A TO262 |