IPI600

IPI600N25N3 G vs IPI600N20N3G vs IPI600N25N3

 
PartNumberIPI600N25N3 GIPI600N20N3GIPI600N25N3
DescriptionMOSFET N-Ch 250V 25A I2PAK-3 OptiMOS 3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-262-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance60 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation136 W--
ConfigurationSingle-Single
TradenameOptiMOS-OptiMOS
PackagingTube-Tube
Height9.45 mm--
Length10.2 mm--
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width4.5 mm--
BrandInfineon Technologies--
Fall Time8 nS-8 ns
Product TypeMOSFET--
Rise Time10 ns-10 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 nS-22 nS
Part # AliasesIPI600N25N3GAKSA1 IPI6N25N3GXK SP000714316--
Unit Weight0.084199 oz-0.084199 oz
Part Aliases--IPI600N25N3GAKSA1 IPI600N25N3GXK SP000714316
Package Case--I2PAK-3
Pd Power Dissipation--136 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--25 A
Vds Drain Source Breakdown Voltage--250 V
Rds On Drain Source Resistance--60 mOhms
Qg Gate Charge--22 nC
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPI600N25N3 G MOSFET N-Ch 250V 25A I2PAK-3 OptiMOS 3
IPI600N25N3GAKSA1 MOSFET N-CH 250V 25A TO262-3
Infineon Technologies
Infineon Technologies
IPI600N25N3GAKSA1 MOSFET MV POWER MOS
IPI600N20N3G Жаңа және түпнұсқа
IPI600N25N3 Жаңа және түпнұсқа
IPI600N25N3G Trans MOSFET N-CH 250V 25A 3-Pin TO-262 Tube - Bulk (Alt: IPI600N25N3G)
IPI600N25N3 G Darlington Transistors MOSFET N-Ch 250V 25A I2PAK-3 OptiMOS 3
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