IPI320N20N

IPI320N20N3 G vs IPI320N20N3 vs IPI320N20N3G

 
PartNumberIPI320N20N3 GIPI320N20N3IPI320N20N3G
DescriptionMOSFET N-Ch 200V 34A I2PAK-3 OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current34 A--
Rds On Drain Source Resistance32 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation136 W--
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height9.45 mm--
Length10.2 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width4.5 mm--
BrandInfineon Technologies--
Fall Time4 nS4 ns-
Product TypeMOSFET--
Rise Time9 nS9 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 nS21 nS-
Part # AliasesIPI320N20N3GAKSA1 IPI32N2N3GXK SP000714312--
Unit Weight0.084199 oz0.084199 oz-
Part Aliases-IPI320N20N3GAKSA1 IPI320N20N3GXK SP000714312-
Package Case-I2PAK-3-
Pd Power Dissipation-136 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-34 A-
Vds Drain Source Breakdown Voltage-200 V-
Rds On Drain Source Resistance-32 mOhms-
Qg Gate Charge-22 nC-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPI320N20N3 G MOSFET N-Ch 200V 34A I2PAK-3 OptiMOS 3
IPI320N20N3GAKSA1 MOSFET N-CH 200V 34A TO262-3
IPI320N20N3 Жаңа және түпнұсқа
IPI320N20N3G Жаңа және түпнұсқа
IPI320N20N3 G Darlington Transistors MOSFET N-Ch 200V 34A I2PAK-3 OptiMOS 3
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