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| PartNumber | IPI200N15N3 | IPI200N15N3G | IPI200N15N3 G |
| Description | MOSFET N-Ch 150V 50A I2PAK-3 OptiMOS 3 | ||
| Manufacturer | Infineon Technologies | Infineon Technologies | |
| Product Category | Transistors - FETs, MOSFETs - Single | FETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS 3 | - | OptiMOS 3 |
| Packaging | Tube | - | Tube |
| Part Aliases | IPI200N15N3GHKSA1 SP000414724 | - | IPI200N15N3GHKSA1 SP000414724 |
| Unit Weight | 0.084199 oz | - | 0.084199 oz |
| Mounting Style | Through Hole | - | Through Hole |
| Tradename | OptiMOS | - | OptiMOS |
| Package Case | I2PAK-3 | - | I2PAK-3 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | Single |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 150 W | - | 150 W |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 6 ns | - | 6 ns |
| Rise Time | 11 ns | - | 11 ns |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 50 A | - | 50 A |
| Vds Drain Source Breakdown Voltage | 150 V | - | 150 V |
| Rds On Drain Source Resistance | 20 mOhms | - | 20 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 23 ns | - | 23 ns |
| Typical Turn On Delay Time | 14 ns | - | 14 ns |
| Channel Mode | Enhancement | - | Enhancement |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| IPI200N15N3 | Жаңа және түпнұсқа | ||
| IPI200N15N3G | Жаңа және түпнұсқа | ||
| IPI200N15N3GXKSA1 | MOSFET N-Ch 150V 50A I2PAK-3 | ||
Infineon Technologies |
IPI200N15N3 G | MOSFET N-Ch 150V 50A I2PAK-3 OptiMOS 3 |