 | |  | |
| PartNumber | IPI180N10N3 G | IPI180N10N3GXKSA1 | IPI180N10N3G |
| Description | MOSFET N-Ch 100V 43A I2PAK-3 OptiMOS 3 | MOSFET MV POWER MOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 43 A | - | - |
| Rds On Drain Source Resistance | 18 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 71 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | IPI180N10N3GXKSA1 IPI18N1N3GXK SP000683076 | G IPI180N10N3 IPI18N1N3GXK SP000683076 | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI180N10N3 G | MOSFET N-Ch 100V 43A I2PAK-3 OptiMOS 3 | |
| IPI180N10N3GXKSA1 | MOSFET N-CH 100V 43A TO262-3 | ||
Infineon Technologies |
IPI180N10N3GXKSA1 | MOSFET MV POWER MOS | |
| IPI180N10N3 G | MOSFET N-Ch 100V 43A I2PAK-3 OptiMOS 3 | ||
| IPI180N10N3G | Жаңа және түпнұсқа |