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| PartNumber | IPI023NE7N3 G | IPI023NE7N3 | IPI023NE7N3G |
| Description | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 | Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2.3 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 155 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 22 nS | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 nS | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 nS | - | - |
| Part # Aliases | IPI023NE7N3GAKSA1 SP000641732 | - | - |
| Unit Weight | 0.084199 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI023NE7N3 G | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 | |
| IPI023NE7N3 | Жаңа және түпнұсқа | ||
| IPI023NE7N3G | Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
Infineon Technologies |
IPI023NE7N3 G | IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 |