IPG20N04S4L-1

IPG20N04S4L-11A vs IPG20N04S4L-11 vs IPG20N04S4L-11ATMA1

 
PartNumberIPG20N04S4L-11AIPG20N04S4L-11IPG20N04S4L-11ATMA1
DescriptionMOSFET N-CHANNEL_30/40VMOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current20 A20 A-
Rds On Drain Source Resistance10.1 mOhms11.6 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage16 V16 V-
Qg Gate Charge26 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation41 W41 W-
ConfigurationDualDual-
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
SeriesOptiMOS-T2OptiMOS-T2-
Transistor Type2 N-Channel2 N-Channel-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time15 ns--
Product TypeMOSFETMOSFET-
Rise Time2 ns--
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time5 ns--
Part # AliasesIPG20N04S4L11AATMA1 SP001023836IPG20N04S4L11ATMA1 IPG2N4S4L11XT SP000705564-
Height-1.27 mm-
Length-5.9 mm-
Width-5.15 mm-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPG20N04S4L-11A MOSFET N-CHANNEL_30/40V
IPG20N04S4L-11 MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
IPG20N04S4L-11A MOSFET N-CHANNEL_30/40V
IPG20N04S4L-11ATMA1 Жаңа және түпнұсқа
IPG20N04S4L-11 IGBT Transistors MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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