PartNumber | IPG20N10S4L-35 | IPG20N10S4L22ATMA1 | IPG20N10S4L22AATMA1 |
Description | MOSFET MOSFET | MOSFET MOSFET | MOSFET N-CHANNEL_100+ |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PG-TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 20 A | 20 A | 20 A |
Rds On Drain Source Resistance | 35 mOhms | 20 mOhms, 20 mOhms | 20 mOhms, 20 mOhms |
Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | 1.1 V |
Vgs Gate Source Voltage | 10 V | 16 V | 16 V |
Qg Gate Charge | 13.4 nC | 27 nC, 27 nC | 27 nC, 27 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 43 W | 60 W | 60 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Series | XPG20N10 | IPG20N10 | - |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 13 ns | 18 ns, 18 ns | 18 ns, 18 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 2 ns | 3 ns, 3 ns | 3 ns, 3 ns |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 18 ns | 30 ns, 30 ns | 30 ns, 30 ns |
Typical Turn On Delay Time | 3 ns | 5 ns, 5 ns | 5 ns, 5 ns |
Part # Aliases | IPG20N10S4L35ATMA1 IPG2N1S4L35XT SP000859022 | IPG20N10S4L-22 IPG2N1S4L22XT SP000866570 | IPG20N10S4L-22A SP001091984 |
Unit Weight | - | 0.003439 oz | - |