IPD80N04S3

IPD80N04S306ATMA1 vs IPD80N04S3-06 vs IPD80N04S306BATMA1

 
PartNumberIPD80N04S306ATMA1IPD80N04S3-06IPD80N04S306BATMA1
DescriptionMOSFET N-CHANNEL_30/40VMOSFET N-Ch 40V 80A DPAK-2 OptiMOS-TMOSFET N-CHANNEL_30/40V
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPD80N04S3-06 IPD8N4S36XT SP000261220IPD80N04S306ATMA1 IPD8N4S36XT SP000261220-
Unit Weight0.139332 oz0.139332 oz-
Vds Drain Source Breakdown Voltage-40 V-
Id Continuous Drain Current-80 A-
Rds On Drain Source Resistance-6 mOhms-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-100 W-
Channel Mode-Enhancement-
Tradename-OptiMOS-
Series-OptiMOS-T-
Fall Time-10 ns-
Rise Time-10 ns-
Typical Turn Off Delay Time-20 ns-
Typical Turn On Delay Time-15 ns-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPD80N04S306ATMA1 MOSFET N-CHANNEL_30/40V
IPD80N04S3-06 MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
IPD80N04S306BATMA1 MOSFET N-CHANNEL_30/40V
IPD80N04S3-06 MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
IPD80N04S306ATMA1 MOSFET N-CH 40V 90A TO252-3
IPD80N04S3-06QN0406 Жаңа және түпнұсқа
IPD80N04S3-06 QN0406 Жаңа және түпнұсқа
IPD80N04S3-06B Жаңа және түпнұсқа
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