 | | |
| PartNumber | IPD60R380P6ATMA1 | IPD60R380P6BTMA1 |
| Description | MOSFET N-Ch 600V 10.6A DPAK-2 | MOSFET N-Ch 600V 10.6A DPAK-2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Configuration | Single | Single |
| Tradename | CoolMOS | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | CoolMOS P6 | CoolMOS P6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPD60R380P6 SP001135814 | IPD60R380P6 SP001017052 |
| Unit Weight | 0.139332 oz | 0.000212 oz |
| Id Continuous Drain Current | - | 10.6 A |
| Rds On Drain Source Resistance | - | 342 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 3.5 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 19 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 83 W |
| Channel Mode | - | Enhancement |
| Fall Time | - | 7 ns |
| Rise Time | - | 6 ns |
| Typical Turn Off Delay Time | - | 33 ns |
| Typical Turn On Delay Time | - | 12 ns |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R380P6ATMA1 | MOSFET N-Ch 600V 10.6A DPAK-2 | |
| IPD60R380P6ATMA1 | RF Bipolar Transistors MOSFET N-Ch 600V 10.6A DPAK-2 | ||
| IPD60R380P6BTMA1 | MOSFET N-CH 600V 3TO252 | ||
Infineon Technologies |
IPD60R380P6BTMA1 | MOSFET N-Ch 600V 10.6A DPAK-2 | |
| IPD60R380P6ATMA1-CUT TAPE | Жаңа және түпнұсқа | ||
| IPD60R380P6 | Trans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R (Alt: IPD60R380P6) |