IPD50R6

IPD50R650CEBTMA1 vs IPD50R650CEATMA1 vs IPD50R650CEAUMA1

 
PartNumberIPD50R650CEBTMA1IPD50R650CEATMA1IPD50R650CEAUMA1
DescriptionMOSFET N-Ch 500V 6.1A DPAK-2MOSFET N-Ch 550V 19A DPAK-2Trans MOSFET N-CH 500V 6.1A 3-Pin(2+Tab) DPAK T/R
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current9 A6.1 A-
Rds On Drain Source Resistance590 mOhms650 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V3 V-
Vgs Gate Source Voltage20 V30 V-
Qg Gate Charge15 nC15 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W47 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameCoolMOS--
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesIPD50R650XPD50R650-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time13 ns13 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns5 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns27 ns-
Typical Turn On Delay Time6 ns6 ns-
Part # AliasesIPD50R650CE SP000992078IPD50R650CEATMA1 SP001117708-
Unit Weight0.139332 oz0.139332 oz-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPD50R650CEBTMA1 MOSFET N-Ch 500V 6.1A DPAK-2
IPD50R650CEATMA1 MOSFET N-Ch 550V 19A DPAK-2
Infineon Technologies
Infineon Technologies
IPD50R650CEAUMA1 Trans MOSFET N-CH 500V 6.1A 3-Pin(2+Tab) DPAK T/R
IPD50R650CEBTMA1 MOSFET N CH 500V 6.1A PG-TO252
IPD50R650CEATMA1 MOSFET N-Ch 550V 19A DPAK-2
IPD50R650CE Trans MOSFET N-CH 500(Min)V 6.1A 3-Pin TO-252 T/R - Bulk (Alt: IPD50R650CE)
IPD50R650CEBTMA1 , 2SD22 Жаңа және түпнұсқа
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