IPD50R39

IPD50R399CPATMA1 vs IPD50R399CPBTMA1 vs IPD50R399CP

 
PartNumberIPD50R399CPATMA1IPD50R399CPBTMA1IPD50R399CP
DescriptionMOSFET N-Ch 550V 9A DPAK-2MOSFET N-Ch 550V 9A DPAK-2 CoolMOS CPMOSFET N-CH 550V 9A TO-252
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current9 A9 A-
Rds On Drain Source Resistance399 mOhms360 mOhms-
Vgs th Gate Source Threshold Voltage3 V2.5 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge17 nC23 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation83 W83 W-
ConfigurationSingleSingle-
TradenameCoolMOS--
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesCoolMOS CEXPD50R399-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time14 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time14 ns14 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time80 ns80 ns-
Typical Turn On Delay Time35 ns35 ns-
Part # AliasesIPD50R399CP SP001117700IPD50R399CPBTMA1 SP000307379-
Unit Weight0.139332 oz0.139332 oz-
RoHS-Y-
Channel Mode-Enhancement-
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPD50R399CPATMA1 MOSFET N-Ch 550V 9A DPAK-2
IPD50R399CP MOSFET N-CH 550V 9A TO-252
IPD50R399CPBTMA1 LOW POWER_LEGACY
IPD50R399CPATMA1 MOSFET N-Ch 550V 9A DPAK-2
Infineon Technologies
Infineon Technologies
IPD50R399CPBTMA1 MOSFET N-Ch 550V 9A DPAK-2 CoolMOS CP
IPD50R399CP/S65R620D Жаңа және түпнұсқа
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