IPD16

IPD16CN10N G vs IPD16CNE8N G vs IPD160N04LGBTMA1

 
PartNumberIPD16CN10N GIPD16CNE8N GIPD160N04LGBTMA1
DescriptionMOSFET N-Ch 100V 53A DPAK-2MOSFET N-CH 85V 53A TO252-3MOSFET N-CH 40V 30A TO252-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current53 A--
Rds On Drain Source Resistance16 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPD16CN10NGXT SP000096454--
Unit Weight0.139332 oz--
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPD16CN10N G MOSFET N-Ch 100V 53A DPAK-2
Infineon Technologies
Infineon Technologies
IPD16CNE8N G MOSFET N-CH 85V 53A TO252-3
IPD160N04LGBTMA1 MOSFET N-CH 40V 30A TO252-3
IPD16CN10N G MOSFET N-CH 100V 53A TO252-3
IPD160N04L Жаңа және түпнұсқа
IPD160N04L G MOSFET, N CHANNEL, 40V, 30A, TO-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0133ohm, Rds(on) Test Voltage Vgs:10V,
IPD160N04LG - Bulk (Alt: IPD160N04LG)
IPD16CN10NG Жаңа және түпнұсқа
IPD16CNE8NG Жаңа және түпнұсқа
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