IPD122

IPD122N10N3GATMA1 vs IPD122N10N3 G vs IPD122N10N3G

 
PartNumberIPD122N10N3GATMA1IPD122N10N3 GIPD122N10N3G
DescriptionMOSFETMOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3100V,59A,N Channel Power MOSFET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePG-TO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current59 A--
Rds On Drain Source Resistance12.2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge26 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation94 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min29 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesG IPD122N10N3 SP001127828--
Unit Weight0.017637 oz--
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPD122N10N3GATMA1 MOSFET
IPD122N10N3GATMA1 MOSFET N-CH 100V 59A
IPD122N10N3GBTMA1 MOSFET N-CH 100V 59A TO252-3
IPD122N10N3 G MOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3
IPD122N10N3G 100V,59A,N Channel Power MOSFET
IPD122N10N3GB Жаңа және түпнұсқа
IPD122N10N3GBTMA1 , 2SD2 Жаңа және түпнұсқа
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