PartNumber | IPD075N03L G | IPD075N03LGATMA1 | IPD06P007NATMA1 |
Description | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | MOSFET N-Ch 30V 50A DPAK-2 | MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 60 V |
Id Continuous Drain Current | 50 A | 50 A | 4.3 A |
Rds On Drain Source Resistance | 7.5 mOhms | 6.3 mOhms | 400 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 47 W | 47 W | 19 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 P-Channel |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 2.8 ns | 2.8 ns | 4 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3.6 ns | 3.6 ns | 6 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 17 ns | - | 10 ns |
Typical Turn On Delay Time | 4.3 ns | - | 4 ns |
Part # Aliases | IPD075N03LGBTMA1 IPD75N3LGXT SP000249747 | G IPD075N03L IPD75N3LGXT SP000680634 | IPD06P007N |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Qg Gate Charge | - | 18 nC | 6.7 nC |
Series | - | OptiMOS 3 | - |
Forward Transconductance Min | - | 61 S | 3.8 S |
Vgs th Gate Source Threshold Voltage | - | - | - 4 V |
Өндіруші | Бөлім № | Сипаттама | RFQ |
---|---|---|---|
Infineon Technologies |
IPD096N08N3GATMA1 | MOSFET | |
IPD079N06L3 G | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | ||
IPD088N06N3 G | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | ||
IPD082N10N3GATMA1 | MOSFET MV POWER MOS | ||
IPD090N03LGATMA1 | MOSFET N-Ch 30V 40A DPAK-2 | ||
IPD079N06L3GBTMA1 | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | ||
IPD075N03L G | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | ||
IPD075N03LGATMA1 | MOSFET N-Ch 30V 50A DPAK-2 | ||
IPD090N03L G | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3 | ||
IPD082N10N3GATMA1 | MOSFET N-CH 100V 80A TO252-3 | ||
IPD075N03LGBTMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
IPD079N06L3GBTMA1 | MOSFET N-CH 60V 50A TO252-3 | ||
IPD088N06N3GBTMA1 | MOSFET N-CH 60V 50A TO252-3 | ||
IPD06P007NATMA1 | TRENCH 40<-<100V | ||
IPD075N03L G | Trans MOSFET N-CH 30V 50A 3-Pin TO-252 T/R (Alt: IPD075N03L G) | ||
IPD075N03LGATMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
IPD079N06L3 G | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: IPD079N06L3 G) | ||
IPD082N10N3GBTMA1 | MOSFET N-CH 100V 80A TO252-3 | ||
IPD088N04LGBTMA1 | MOSFET N-CH 40V 50A TO252-3 | ||
IPD088N06N3 G | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 | ||
IPD090N03LGATMA1 | MOSFET N-CH 30V 40A TO252-3 | ||
IPD090N03LGBTMA1 | MOSFET N-CH 30V 40A TO252 | ||
IPD096N08N3GATMA1 | MOSFET N-CH 80V 73A | ||
IPD096N08N3GBTMA1 | MOSFET N-CH 80V 73A TO252-3 | ||
IPD090N03L G | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3 | ||
Infineon Technologies |
IPD082N10N3GBTMA1 | MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 | |
IPD079N06L3GBTMA1-CUT TAPE | Жаңа және түпнұсқа | ||
IPD090N03LGATMA1-CUT TAPE | Жаңа және түпнұсқа | ||
IPD090N03LGXT | Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD090N03LGBTMA1) | ||
IPD075N03L | Жаңа және түпнұсқа | ||
IPD075N03LG,075N03LG | Жаңа және түпнұсқа | ||
IPD079N06L3 | Жаңа және түпнұсқа | ||
IPD079N06L3G | 60V,7.9m��,50A,N-Channel Power MOSFET | ||
IPD07N03L | Жаңа және түпнұсқа | ||
IPD082N10N3 | Жаңа және түпнұсқа | ||
IPD088N04L | Жаңа және түпнұсқа | ||
IPD088N04L G | MOSFET N-Ch 40V 50A DPAK-2 | ||
IPD088N04LG | Жаңа және түпнұсқа | ||
IPD088N06N3 | Жаңа және түпнұсқа | ||
IPD088N06N3G | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-252 (Alt: IPD088N06N3 G) | ||
IPD090N032 | Жаңа және түпнұсқа | ||
IPD090N03L | Жаңа және түпнұсқа | ||
IPD090N03LAG | Жаңа және түпнұсқа | ||
IPD096N08N3 G | MOSFET N-Ch 80V 73A DPAK-2 OptiMOS 3 | ||
IPD096N08N3GBTMA1 , 2SD2 | Жаңа және түпнұсқа | ||
IPD075N03LG | Жаңа және түпнұсқа | ||
IPD082N10N3G | 100V,80A,N Channel Power MOSFET | ||
IPD090N03LG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
IPD096N08N3G | Trans MOSFET N-CH 80V 73A 3-Pin TO-252 T/R - Bulk (Alt: IPD096N08N3G) | ||
IPD082N10N3 G | IGBT Transistors MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 |