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| PartNumber | IPB80N06S2-07 | IPB80N06S2-08 | IPB80N06S2-05 |
| Description | MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS | Darlington Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS | RF Bipolar Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS |
| Manufacturer | - | INF | INFINEON |
| Product Category | - | FETs - Single | FETs - Single |
| Series | - | OptiMOS | OptiMOS |
| Packaging | - | Reel | Reel |
| Part Aliases | - | IPB80N06S208ATMA1 IPB80N06S208ATMA2 SP001067884 | IPB80N06S205ATMA1 IPB80N06S205XT SP000218877 |
| Unit Weight | - | 0.139332 oz | 0.139332 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Tradename | - | OptiMOS | OptiMOS |
| Package Case | - | TO-252-3 | TO-252-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 215 W | 300 W |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 14 ns | 20 ns |
| Rise Time | - | 15 ns | 21 ns |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 80 A | 80 A |
| Vds Drain Source Breakdown Voltage | - | 55 V | 55 V |
| Rds On Drain Source Resistance | - | 7.7 mOhms | 4.8 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 32 ns | 54 ns |
| Typical Turn On Delay Time | - | 14 ns | 18 ns |
| Channel Mode | - | Enhancement | Enhancement |