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| PartNumber | IPB120N04S4-02 | IPB120N04S4-02(4N0402) | IPB120N04S4-02/4N0402 |
| Description | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | ||
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 1.58 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 134 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 158 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS-T2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 27 ns | - | - |
| Part # Aliases | IPB120N04S402ATMA1 IPB12N4S42XT SP000764726 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB120N04S4-02 | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | |
| IPB120N04S4-02(4N0402) | Жаңа және түпнұсқа | ||
| IPB120N04S4-02/4N0402 | Жаңа және түпнұсқа | ||
| IPB120N04S4-02 | RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 |