IPB049NE

IPB049NE7N3 G vs IPB049NE7N3 vs IPB049NE7N3G

 
PartNumberIPB049NE7N3 GIPB049NE7N3IPB049NE7N3G
DescriptionMOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 375V,80A,N Channel Power MOSFET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance4.4 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge68 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min52 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesIPB049NE7N3GATMA1 IPB49NE7N3GXT SP000641752--
Unit Weight0.139332 oz--
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
IPB049NE7N3 G MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
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IPB049NE7N3 Жаңа және түпнұсқа
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