 |  | | |
| PartNumber | IPB019N06L3 G | IPB019N06L | IPB019N06L3 |
| Description | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | ||
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 1.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 166 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | - | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | OptiMOS 3 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 113 S | - | - |
| Fall Time | 38 ns | - | 38 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 79 ns | - | 79 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 131 ns | - | 131 ns |
| Typical Turn On Delay Time | 35 ns | - | 35 ns |
| Part # Aliases | IPB019N06L3GATMA1 IPB19N6L3GXT SP000453020 | - | - |
| Unit Weight | 0.068654 oz | - | 0.068654 oz |
| Part Aliases | - | - | IPB019N06L3GATMA1 IPB019N06L3GXT SP000453020 |
| Package Case | - | - | TO-263-3 |
| Pd Power Dissipation | - | - | 250 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 1.9 mOhms |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB019N06L3 G | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | |
| IPB019N06L3GATMA1 | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | ||
| IPB019N06L3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB019N06L | Жаңа және түпнұсқа | ||
| IPB019N06L3 | Жаңа және түпнұсқа | ||
| IPB019N06L3 G | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 | ||
| IPB019N06L3G | Жаңа және түпнұсқа |