 |  | | |
| PartNumber | IPA057N08N3 G | IPA057N08N3 | IPA057N08N3G |
| Description | MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 | Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | Infineon | Infineon Technologies | INF |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 5.7 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 39 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 16.15 mm | - | - |
| Length | 10.65 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.85 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 9 ns | 9 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 42 ns | 42 ns | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 36 ns | 36 ns | - |
| Typical Turn On Delay Time | 17 ns | 17 ns | - |
| Part # Aliases | IPA057N08N3GXKSA1 IPA57N8N3GXK SP000454442 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Part Aliases | - | IPA057N08N3GXK IPA057N08N3GXKSA1 SP000454442 | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 39 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 60 A | - |
| Vds Drain Source Breakdown Voltage | - | 80 V | - |
| Rds On Drain Source Resistance | - | 5.7 mOhms | - |
| Qg Gate Charge | - | 18 nC | - |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA057N08N3 G | MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 | |
| IPA057N08N3GXKSA1 | MOSFET N-CH 80V 60A TO220-3 | ||
| IPA057N08N3GXK | Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA057N08N3GXKSA1) | ||
| IPA057N08N3 | Жаңа және түпнұсқа | ||
| IPA057N08N3G | Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPA057N08N3G,057N08N | Жаңа және түпнұсқа | ||
| IPA057N08N3GXKSA1 , 2SD1 | Жаңа және түпнұсқа | ||
| IPA057N08N3 G | Darlington Transistors MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3 |