| PartNumber | HN2C01FU-GR(T5L,F) | HN2C01FU-Y(TE85L,F | HN2C01FEYTE85LF |
| Description | Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6 | Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=200mW F=80MHz | Bipolar Transistors - BJT Trans LFreq 50V NPN NPN 0.15A |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | - | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | US-6 | SMT-6 | SOT-563-6 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
| Collector Base Voltage VCBO | 60 V | 60 V | 60 V |
| Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 0.1 V | 0.1 V | 0.1 V |
| Maximum DC Collector Current | 150 mA | 150 mA | 150 mA |
| Gain Bandwidth Product fT | 80 MHz | 80 MHz | 60 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Series | HN2C01 | - | HN2C01 |
| DC Current Gain hFE Max | 400 | 400 | 400 |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| DC Collector/Base Gain hfe Min | 120 | 120 | 120 |
| Pd Power Dissipation | 200 mW | 200 mW | 100 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 4000 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | - |
| Continuous Collector Current | - | 150 mA | 150 mA |
| Unit Weight | - | - | 0.000106 oz |