FZT1149

FZT1149ATA vs FZT1149 vs FZT1149A

 
PartNumberFZT1149ATAFZT1149FZT1149A
DescriptionBipolar Transistors - BJT NPN High Gain & CrntTRANSISTOR, PNP, SOT-223, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:25V, Transition Frequency ft:135MHz, Power Dissipation Pd:2.5W, DC Collector Current:4A, DC Current Gain hFE
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 25 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 230 mV--
Maximum DC Collector Current4 A--
Gain Bandwidth Product fT135 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT114--
DC Current Gain hFE Max270--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 4 A--
DC Collector/Base Gain hfe Min270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V--
Pd Power Dissipation2.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Өндіруші Бөлім № Сипаттама RFQ
Diodes Incorporated
Diodes Incorporated
FZT1149ATA Bipolar Transistors - BJT NPN High Gain & Crnt
FZT1149ATC Bipolar Transistors - BJT NPN High Gain & Crnt
FZT1149ATA Bipolar Transistors - BJT NPN High Gain & Crnt
FZT1149 Жаңа және түпнұсқа
FZT1149A TRANSISTOR, PNP, SOT-223, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:25V, Transition Frequency ft:135MHz, Power Dissipation Pd:2.5W, DC Collector Current:4A, DC Current Gain hFE
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