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| PartNumber | FQU2N50BTU-WS | FQU2N50BTU |
| Description | MOSFET Power MOSFET | MOSFET Power MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 1.6 A | 1.6 A |
| Rds On Drain Source Resistance | 5.3 Ohms | 5.3 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Height | 6.3 mm | 6.3 mm |
| Length | 6.8 mm | 6.8 mm |
| Series | FQU2N50B | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 2.5 mm | 2.5 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 20 ns | 20 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 25 ns | 25 ns |
| Factory Pack Quantity | 5040 | 70 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10 ns | 10 ns |
| Typical Turn On Delay Time | 6 ns | 6 ns |
| Part # Aliases | FQU2N50BTU_WS | - |
| Unit Weight | 0.012102 oz | 0.139332 oz |
| Type | - | MOSFET |
| Forward Transconductance Min | - | 1.3 S |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQU2N50BTU-WS | MOSFET Power MOSFET | |
| FQU2N50BTU | MOSFET Power MOSFET | ||
ON Semiconductor |
FQU2N50BTU | MOSFET N-CH 500V 1.6A IPAK | |
| FQU2N50BTU-WS | MOSFET N-CH 500V 1.6A IPAK | ||
| FQU2N50BTU_WS | IGBT Transistors MOSFET Power MOSFET |