FQP6N9

FQP6N90 vs FQP6N90C

 
PartNumberFQP6N90FQP6N90C
DescriptionMOSFET 900V N-Channel QFETMOSFET 900V N-Ch Q-FET advance C-Series
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V900 V
Id Continuous Drain Current5.8 A6 A
Rds On Drain Source Resistance1.9 Ohms2.3 Ohms
Vgs Gate Source Voltage30 V30 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation167 W167 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingTubeTube
Height16.3 mm16.3 mm
Length10.67 mm10.67 mm
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width4.7 mm4.7 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time55 ns60 ns
Product TypeMOSFETMOSFET
Rise Time80 ns90 ns
Factory Pack Quantity501000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time95 ns55 ns
Typical Turn On Delay Time35 ns35 ns
Part # AliasesFQP6N90_NLFQP6N90C_NL
Unit Weight0.050717 oz0.063493 oz
Tradename-QFET
Series-FQP6N90C
Forward Transconductance Min-5.5 S
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP6N90 MOSFET 900V N-Channel QFET
FQP6N90C MOSFET 900V N-Ch Q-FET advance C-Series
ON Semiconductor
ON Semiconductor
FQP6N90 MOSFET N-CH 900V 5.8A TO-220
FQP6N90C MOSFET N-CH 900V 6A TO-220
FQP6N90/SSS6N90 Жаңа және түпнұсқа
FQP6N90C FQPF6N90C Жаңа және түпнұсқа
FQP6N90C,6N90C, Жаңа және түпнұсқа
FQP6N90C,6N90C,6N90 Жаңа және түпнұсқа
FQP6N90C,6N90C,6N90, Жаңа және түпнұсқа
FQP6N90C,P6N90C,6N90C, Жаңа және түпнұсқа
FQP6N90C-TU Жаңа және түпнұсқа
FQP6N90C/ Жаңа және түпнұсқа
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