| PartNumber | FQI27N25TU | FQI27N25TU-F085 |
| Description | MOSFET 250V N-Channel QFET | MOSFET 250V 0.11OHM 25.5A N-CH MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V |
| Id Continuous Drain Current | 25.5 A | 25.5 A |
| Rds On Drain Source Resistance | 110 mOhms | 110 Ohms |
| Vgs Gate Source Voltage | 30 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 3.13 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Tube | - |
| Height | 7.88 mm | 7.88 mm |
| Length | 10.29 mm | 10.29 mm |
| Series | FQI27N25 | FQI27N25TU_F085 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - |
| Width | 4.83 mm | 4.83 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 24 S | - |
| Fall Time | 120 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 270 ns | - |
| Factory Pack Quantity | 1000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 80 ns | - |
| Typical Turn On Delay Time | 32 ns | - |
| Part # Aliases | FQI27N25TU_NL | FQI27N25TU_F085 |
| Unit Weight | 0.073511 oz | 0.073511 oz |
| Qualification | - | AEC-Q101 |
| Tradename | - | UltraFET QFET |