FQI

FQI9N15TU vs FQI9N25 vs FQI9N25C

 
PartNumberFQI9N15TUFQI9N25FQI9N25C
DescriptionMOSFET 150V Single
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time58 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time5.5 ns--
Unit Weight0.084199 oz--
  • -ден бастаңыз
  • FQI 218
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQI9N50CTU MOSFET 500V N-Channel Adv Q-FET C-Series
FQI9N50TU MOSFET 500V N-Channel QFET
FQI9N15TU MOSFET 150V Single
FQI9N25 Жаңа және түпнұсқа
FQI9N25C Жаңа және түпнұсқа
FQI9N30 Жаңа және түпнұсқа
FQI9N30TU Жаңа және түпнұсқа
FQI9N50 Жаңа және түпнұсқа
FQI9N50C Жаңа және түпнұсқа
FQIIN50B Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
FQI9N25CTU MOSFET N-CH 250V 8.8A I2PAK
FQI9N50CTU MOSFET N-CH 500V 9A I2PAK
FQI9N50TU MOSFET N-CH 500V 9A I2PAK
FQI9N15TU MOSFET N-CH 150V 9A I2PAK
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