 | | | |
| PartNumber | FQB7N80 | FQB7N80 7N80 7A 800V | FQB7N80TM |
| Description | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| Manufacturer | - | - | FAIRCHILD |
| Product Category | - | - | FETs - Single |
| Өндіруші | Бөлім № | Сипаттама | RFQ |
|---|---|---|---|
| FQB7N80 | Жаңа және түпнұсқа | ||
| FQB7N80 7N80 7A 800V | Жаңа және түпнұсқа | ||
| FQB7N80TM | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB7N80TM-NL | Жаңа және түпнұсқа | ||
ON Semiconductor |
FQB7N80TM_AM002 | MOSFET N-CH 800V 6.6A D2PAK |