FQB5N8

FQB5N80TM vs FQB5N80 vs FQB5N80TM-NL

 
PartNumberFQB5N80TMFQB5N80FQB5N80TM-NL
DescriptionMOSFET 800V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current4.8 A--
Rds On Drain Source Resistance2.6 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time60 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time22 ns--
Unit Weight0.139332 oz--
Өндіруші Бөлім № Сипаттама RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB5N80TM MOSFET 800V N-Channel QFET
FQB5N80 Жаңа және түпнұсқа
FQB5N80TM-NL Жаңа және түпнұсқа
ON Semiconductor
ON Semiconductor
FQB5N80TM MOSFET N-CH 800V 4.8A D2PAK
Top