FP75R12KE

FP75R12KE3 vs FP75R12KE3BOSA1 vs FP75R12KE3G

 
PartNumberFP75R12KE3FP75R12KE3BOSA1FP75R12KE3G
DescriptionIGBT Modules 1200V 75A PIMIGBT MODULE 1200V 75A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C105 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation350 W--
Package / CaseEconoPIM3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length122 mm--
Width62 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFP75R12KE3BOSA1 SP000100415--
Unit Weight10.582189 oz--
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
FP75R12KE3 IGBT Modules 1200V 75A PIM
FP75R12KE3BOSA1 IGBT MODULE 1200V 75A
FP75R12KE3G Жаңа және түпнұсқа
FP75R12KE3V1 Жаңа және түпнұсқа
FP75R12KE3 IGBT Modules 1200V 75A PIM
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