FP50R12KE

FP50R12KE3 vs FP50R12KE3BOSA1 vs FP50R12KE3G

 
PartNumberFP50R12KE3FP50R12KE3BOSA1FP50R12KE3G
DescriptionIGBT Modules 1200V 50A PIMIGBT MODULE 1200V 50A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C75 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation270 W--
Package / CaseEconoPIM3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length122 mm--
Width62 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFP50R12KE3BOSA1 SP000101740--
Unit Weight10.582189 oz--
Өндіруші Бөлім № Сипаттама RFQ
Infineon Technologies
Infineon Technologies
FP50R12KE3 IGBT Modules 1200V 50A PIM
FP50R12KE3BOSA1 IGBT MODULE 1200V 50A
FP50R12KE3G Жаңа және түпнұсқа
FP50R12KE3V1 Жаңа және түпнұсқа
FP50R12KE3 IGBT Modules 1200V 50A PIM
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